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JEOL Ltd.. (2/24/15). "Press Release: Release of New MultiBeam (FIB) System JIB-4610F. High-throughput for Milling Large Areas with High Currents".

Organisation Organisation JEOL Ltd. (JP)
  Group JEOL (Group)
Products Product JIB-4610F multibeam milling and imaging system
  Product 2 scanning electron microscope (SEM)
Person Person Kurihara, Gon-emon (JEOL 201108 President)

JEOL Ltd. (President Gon-emon Kurihara) has developed a new multi-beam focused ion milling and imaging system JIB-4610F (FIB), with sales starting in February 24, 2015.

Product development background

High resolution and precision are now required for almost evaluation techniques, including crystal analysis, element mapping and morphology observations for increasingly complex processes and structural miniaturization for advanced materials. The JIB-4610F is a multibeam milling and imaging system developed to meet these needs with a single tool. This system incorporates an easy-to-use, out-lens type scanning electron microscope (SEM) equipped with a Schottky electron gun and a new FIB column capable of large milling currents (90 nA) into a single chamber.

After high-speed processing of the cross-section using FIB, it is possible to perform high-speed analysis using any of the various analysis units like CLD (cathodoluminescence), EBSD (crystal orientation analysis system) and EDS (energy dispersive X-ray spectrometry), making use of the high-resolution SEM imaging and the Schottky electron gun capable of providing large currents (200 nA).

The standard configuration includes a 3D analysis function, where milling of cross sections is performed automatically at fixed intervals, with SEM images acquired for each cross section (Cut&See). By also utilizing the optional 3D reconstruction software, it is possible to make even more detailed analyses of the 3 dimensional structures of a complex sample.

Main Features

> High-precision processing and high-resolution imaging delivered by a combination of an FIB column and a high-resolution SEM equipped with a Schottky electron gun

> It is possible to observe a cross section with high-resolution SEM (resolution of 1.2 nm at 30 kV, and 3.0 nm at 1 kV) after using FIB to perform milling of the cross section with high positioning precision. It is also possible to fabricate even more precise thin-film specimens for transmission electron microscope (TEM).

> High-speed milling of large areas achieved with the FIB column having a maximum ion current of 90 nA

> The use of a new, large-current FIB column (maximum 90 nA) enables even faster processing. (Milling speeds of more than 2 times faster than conventional devices (in-house comparison)). This is especially useful for large surface areas.

> High-speed and high-resolution analysis such as EDS, EBSD, CLD (option) possible with the electron gun capable of a maximum current of 200 nA

> The SEM column with a maximum current of 200 nA provides high-speed, high-resolution analysis capability. SEM imaging and analysis can be performed after FIB milling of the surface of the observed area, without moving the stage.

> 3D imaging, 3D analysis

> By combining various analysis units (optional) with the high-speed, large-current FIB and the high-resolution SEM equipped with the Schottky gun enables
Automatic continuous milling and imaging of SEM images using Cut & See
Automatic continuous data acquisition for EDS and EBSD mapping

> By stacking the sequentially acquired images, imaging and analysis can be rendered in 3D. In addition, for any type of analysis, the data can be acquired without any tilting, rotation or translation of the stage.

> Cooling stage and Cryo-unit (option) can be installed

> Heat damage from exposure to the ion beam during FIB milling can be reduced. The Cryo-unit is useful for milling and imaging of frozen materials containing water.

> Compatibility with JEOL TEM

> Using the shuttle retainer allows seamless transfers for TEM observation after FIB milling.

Main Specifications

Beam source Schottky electron gun
Objective lens Super conical objective lens
EOS Secondary electron resolution: 1.2 nm (Acc. voltage 30 kV),
3.0 nm (Acc. voltage 1.0 kV)
Magnification: ×20 to 1,000,000.-
Probe current: 1 pA to 200 nA
Emitter life: 3 years
FIB Ion source: Ga liquid-metal ion source
Image resolution: 4nm (30kV)
Magnification: ×50 to 300,000.-
Acc. Voltage: 1 to 30kV
Beam current: 1 pA to 90 nA (30 kV)
Stage control Computer-controlled 6-axis motor stage
Deposition gas material Carbon, Tungsten, Platinum (option)
Operating system Windows®7 GUI/mouse, Operation panel

Notices:Windows is a registered trademark of Microsoft Corporation in the United States and other countries.

Annual unit sales target

20 units/year


JEOL is a world leader in electron optical equipment and instrumentation for high-end scientific and industrial research and development. Core product groups include electron microscopes (SEMs and TEMs), instruments for the semiconductor industry (electron beam lithography and a series of defect review and inspection tools), and analytical instruments including mass spectrometers, NMRs and ESRs.

For more information about JEOL Ltd. or any JEOL products, visit

Record changed: 2019-06-09


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